#2MBI200U4H-120 Fuji 2MBI200U4H-120 New IGBT Array & Module Transistor N Channel 200 A 2.05 V 1.04 kW 1.2 kV Module;, #2MBI200U4H_120
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Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:300A
Collector current Icp:600A
Collector power dissipation Pc:1040W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting (*2) screw torque 3.5 N·m
Mounting (*3) screw torque 4.5 N·m
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:300A
Collector current Icp:600A
Collector power dissipation Pc:1040W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting (*2) screw torque 3.5 N·m
Mounting (*3) screw torque 4.5 N·m