#6MBI25J-120 Fuji 6MBI25J-120 New 6MBI25J-120 Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES; 6MBI25J-120, #6MBI25J_120
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6MBI25J-120 Features
.Low Saturation Voltage
.Voltage Drive
.Variety of Power Capacity Series
Applications
.Inverter for Motor Drive
.AC and DC Servo Drive Amplifier
.Uninterruptible Power Supply
.Industrial Machines,such as Welding Machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:25A
Collector current Icp:50A
Collector power dissipation Pc:220W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 570 g
Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES
.Low Saturation Voltage
.Voltage Drive
.Variety of Power Capacity Series
Applications
.Inverter for Motor Drive
.AC and DC Servo Drive Amplifier
.Uninterruptible Power Supply
.Industrial Machines,such as Welding Machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:25A
Collector current Icp:50A
Collector power dissipation Pc:220W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 570 g
Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES