#BSM100GB120DN2 Infineon BSM100GB120DN2 New BSM100GB120DN2 IGBT: 100A1200V;IGBT Modules 1200V 100A DUAL ; BSM100GB120DN2, #BSM100GB120DN2
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Email: [email protected]
BSM100GB120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 150 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 800 W
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
IGBT: 100A1200V;IGBT Modules 1200V 100A DUAL
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 150 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 800 W
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
IGBT: 100A1200V;IGBT Modules 1200V 100A DUAL