Skip to content
Menu
bsm300gb120dlc
  • Home
  • components
  • الإخبارية
bsm300gb120dlc

Infineon TDB6HK124N16RR New Stock

Posted on 2022-09-29
Infineon TDB6HK124N16RR New Stock
Infineon TDB6HK124N16RR New Stock
Infineon TDB6HK124N16RR New Stock
Infineon TDB6HK124N16RR New Stock
#TDB6HK124N16RR Infineon TDB6HK124N16RR New Technical Information Infineon IGBT Module VCES=1200V IC nom=100A , TDB6HK124N16RR pictures, TDB6HK124N16RR price, #TDB6HK124N16RR supplier


Email: [email protected]

https://www.slw-ele.com/tdb6hk124n16rr.html

Typical Applications
. Active Rectifier
. Half Controlled B6-bridge
Mechanical Features
. 2.5kV AC i min Insulation
. A1203 Substate with Low Thermal Resistance
. High Power Density
. High mechanical robustness
. Isolated Base Plate
. Compact design
. Copper Base Plate
. solder Contact Technology
. RoHS compliant
. Standard Housing
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 80°C, Tvj max = 175°C IC nom 100 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 200 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 515 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C
Mounting Schraube M5 screw torque 3.0~6.0 N·m
Gewicht Weight 180g

  • components
  • الإخبارية
  • ابدأ من أبعاد متعددة لإنشاء معدات اختبار أوتوماتيكية مستقرة وفعالة لتلبية الفرص والتحديات في عصر تكامل الدائرة المتكاملة
  • نتحدث عن حالة صناعة شنغهاي IC
  • Fuji 2MBI100U4A-120 New Stock
  • Fuji 2MBI200U4H-120 New Stock
  • ما هو الفرق بين المستشعر والمشغل
©2022 bsm300gb120dlc | Created by bsm300gb120dlc
Go to mobile version