#P760A06 IXYS P760A06 New P760A06 Bridge Rectifier Diode 3 Phase 145A 1600V V(RRM) Silicon; VUB145-16NOXT;P760A06 , P760A06 pictures, P760A06 price, #P760A06 supplier
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Email: [email protected]
P760A06 Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● X2PT – 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
– short circuit rated for 10 μsec
– very low gate charge
– low EMI
– square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:180A
Collector current Icp:360A
Collector power dissipation Pc:500W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Bridge Rectifier Diode 3 Phase 145A 1600V V(RRM) Silicon
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● X2PT – 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
– short circuit rated for 10 μsec
– very low gate charge
– low EMI
– square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:180A
Collector current Icp:360A
Collector power dissipation Pc:500W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Bridge Rectifier Diode 3 Phase 145A 1600V V(RRM) Silicon