#STK621-018 Sanyo STK621-018 New STK621-018 3-phase inverter power hybrid IGBT and FRD 450V±8A;, #STK621_018
Email: [email protected]
Email: [email protected]
OUTLINE
・This IC is a 3-phase inverter power hybrid IC containing power elements (IGBT and
FRD), pre-driver, overcurrent protection circuit.
APPLICATION
・3-phase inverter motor drive
FEATURES
・Integrates power elements (IGBT and FRD), pre-driver, and protective circuit.
・Protective circuits including overcurrent (bus line), and pre-drive low voltageprotection are built in.
・Direct input of CMOS level control signals without an insulating circuit (photocoupler, etc) is possible.
･A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies. (externally set)
・Built-in simultaneous upper/lower ON prevention circuit to prevent arm shorting through simultaneous ON input for the upper and lower side transistors.
(Dead time is required for preventing shorting due to switching delay.)
･SIP (The single in-line package) of the transfer full mold structure.
Supply voltage ＶCC 450V
Collector-emitter ＶCE 600V
Output current ＩO ±3A
Output peak current ＩOP ±8 Ａ
Input signal voltage ＶIN 0～7 Ｖ
FAULT terminal voltage ＶFAULT 20 Ｖ
Junction temperature Ｔj 150 ℃
Strage temperature Ｔstg -40～+125 ℃
3-phase inverter power hybrid IGBT and FRD 450V±8A
・This IC is a 3-phase inverter power hybrid IC containing power elements (IGBT and
FRD), pre-driver, overcurrent protection circuit.
APPLICATION
・3-phase inverter motor drive
FEATURES
・Integrates power elements (IGBT and FRD), pre-driver, and protective circuit.
・Protective circuits including overcurrent (bus line), and pre-drive low voltageprotection are built in.
・Direct input of CMOS level control signals without an insulating circuit (photocoupler, etc) is possible.
･A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies. (externally set)
・Built-in simultaneous upper/lower ON prevention circuit to prevent arm shorting through simultaneous ON input for the upper and lower side transistors.
(Dead time is required for preventing shorting due to switching delay.)
･SIP (The single in-line package) of the transfer full mold structure.
Supply voltage ＶCC 450V
Collector-emitter ＶCE 600V
Output current ＩO ±3A
Output peak current ＩOP ±8 Ａ
Input signal voltage ＶIN 0～7 Ｖ
FAULT terminal voltage ＶFAULT 20 Ｖ
Junction temperature Ｔj 150 ℃
Strage temperature Ｔstg -40～+125 ℃
3-phase inverter power hybrid IGBT and FRD 450V±8A