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IGBT Module; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:565A; Collector Emitter Saturation Voltage, Vce(sat):2V; Package/Case:SEMITRANS 3; Collector Emitter Voltage, V(br)ceo:1200V ;RoHS Compliant: Yes SKM400GB128D
Features:
.Homogeneous Si
.Trench=Trenchgate technology
.Vce(sat) with positive temperature coefficient
.High short cirauit capability,self limiting to 6xIc
Typical Applications
.SC inverter drives
.UPS
.Electronic welders
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:400A
Collector current Icp:600A
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
SEMITRANS 3 – SPT IGBT Module