#MG150Q2YS50 Toshiba MG150Q2YS50 New MG150Q2YS50 High Power Switching ApplicationsMotor Control Applications; MG150Q2YS50, #MG150Q2YS50
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MG150Q2YS50 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS), Toshiba
Collector-emitter voltage Vces=1200V
Gate-emitter voltage Vges=±20V
Collector current DC IC=200 / 150A VCE = 5V
Collector current 1ms ICP=400/300A
Forward current DC IF=150A
Forward current 1ms IFM=300A
collector power dissipation(Tc = 25°C) PC=1250W
Junction temperature Tj=150°C
Storage temperature range Tstg=−40 ~ 125 °C
Isolation voltage VIsol=2500V
Screw torque (Terminal / mounting)= 3/3 N·m
High Power Switching ApplicationsMotor Control Applications
Collector-emitter voltage Vces=1200V
Gate-emitter voltage Vges=±20V
Collector current DC IC=200 / 150A VCE = 5V
Collector current 1ms ICP=400/300A
Forward current DC IF=150A
Forward current 1ms IFM=300A
collector power dissipation(Tc = 25°C) PC=1250W
Junction temperature Tj=150°C
Storage temperature range Tstg=−40 ~ 125 °C
Isolation voltage VIsol=2500V
Screw torque (Terminal / mounting)= 3/3 N·m
High Power Switching ApplicationsMotor Control Applications