#MG400Q2YS60A Toshiba MG400Q2YS60A New MG400Q2YS60A TRANS IGBT MODULE N-CH 1200V 400A; MG400Q2YS60A, #MG400Q2YS60A
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#MG400Q2YS60A Description
High Power Switching Applications Motor Control Applications
· Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)
· The electrodes are isolated from case.
· Low thermal resistance.
· VCE (sat) = 2.4 V (typ.)
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:400A
Collector current Icp:800A
Collector power dissipation Pc:3750W
Collector-Emitter voltage VCES:2500(AC 1 min) V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3(M5) N·m
TRANS IGBT MODULE N-CH 1200V 400A
High Power Switching Applications Motor Control Applications
· Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)
· The electrodes are isolated from case.
· Low thermal resistance.
· VCE (sat) = 2.4 V (typ.)
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:400A
Collector current Icp:800A
Collector power dissipation Pc:3750W
Collector-Emitter voltage VCES:2500(AC 1 min) V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3(M5) N·m
TRANS IGBT MODULE N-CH 1200V 400A